Electrodeposition of CuInTe2 film from an acidic solution

T. Ishizaki; N. Saito; A. Fuwa

doi:10.1016/j.surfcoat.2003.07.004

Electrodeposition of CuInTe₂ film from an acidic solution

T. Ishizaki^*, N. Saito, A. Fuwa

^*この研究の対応する著者

研究成果: Article › 査読

19 被引用数 (Scopus)

抄録

Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl₂, InCl₃, TeO₂ and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10^-4 mol dm^-3 CuCl₂, 1.0×10^-2 mol dm^-3 InCl₃, 5.0×10^-4 mol dm^-3 TeO₂ and 0.1 mol dm^-3 HCl, a polycrystalline CuInTe₂ film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe₂ film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe₂ film electrodeposited at 363 K at -660 mV was 0.98 eV.

本文言語	English
ページ（範囲）	159-160
ページ数	2
ジャーナル	Surface and Coatings Technology
巻	182
号	2-3
DOI	https://doi.org/10.1016/j.surfcoat.2003.07.004
出版ステータス	Published - 2004 4月 22

ASJC Scopus subject areas

表面、皮膜および薄膜
凝縮系物理学
表面および界面

文献へのアクセス

10.1016/j.surfcoat.2003.07.004

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引用スタイル

@article{150021231643436285ba13a234f3f5ed,

title = "Electrodeposition of CuInTe2 film from an acidic solution",

abstract = "Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.",

keywords = "Copper-indium-telluride, Deposition process, Electrochemistry",

author = "T. Ishizaki and N. Saito and A. Fuwa",

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doi = "10.1016/j.surfcoat.2003.07.004",

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T1 - Electrodeposition of CuInTe2 film from an acidic solution

AU - Ishizaki, T.

AU - Saito, N.

AU - Fuwa, A.

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Y1 - 2004/4/22

N2 - Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.

AB - Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.

KW - Copper-indium-telluride

KW - Deposition process

KW - Electrochemistry

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