TY - JOUR
T1 - Electrodeposition of CuInTe2 film from an acidic solution
AU - Ishizaki, T.
AU - Saito, N.
AU - Fuwa, A.
PY - 2004/4/22
Y1 - 2004/4/22
N2 - Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.
AB - Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.
KW - Copper-indium-telluride
KW - Deposition process
KW - Electrochemistry
UR - http://www.scopus.com/inward/record.url?scp=2142755384&partnerID=8YFLogxK
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U2 - 10.1016/j.surfcoat.2003.07.004
DO - 10.1016/j.surfcoat.2003.07.004
M3 - Article
AN - SCOPUS:2142755384
VL - 182
SP - 159
EP - 160
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - 2-3
ER -