TY - GEN
T1 - Electrodeposition of Gold Electrode on Silicon Wafers for Submillimeter-wave Devices
AU - Saito, Mikiko
AU - Seto, Hiroyuki
AU - Inoue, Yoshiyuki
AU - Hirokawa, Jiro
N1 - Funding Information:
This work was supported by JSPS KAKENHI Grant Number 17H01278 and by MEXT, Japan.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - The investigation of waveguide type submillimeter-wave (100 GHz-1 THz) antennas using Si wafers was performed. Si wafers were modified by the dry etching technique, followed by the through Si vias and Au films being deposited on the front, back, and the interior Si through a catalyzing process. The interior Si was used as the waveguide for the submillimeter-wavedevices. Using these modified Si wafers, two catalyzing processes were investigated, namely, a Sn-Pd process, and a self-assembled monolayer (SAM) process. In order to strengthen the adhesion force of the deposited films and the Si wafer, a Cr film was formed on both sides of the Si wafers. After the catalyzing process, electroless Ni deposited film was formed, followed by electrodeposited Au. It was confirmed that this structure worked as an antenna in the submillimeter-wave band.
AB - The investigation of waveguide type submillimeter-wave (100 GHz-1 THz) antennas using Si wafers was performed. Si wafers were modified by the dry etching technique, followed by the through Si vias and Au films being deposited on the front, back, and the interior Si through a catalyzing process. The interior Si was used as the waveguide for the submillimeter-wavedevices. Using these modified Si wafers, two catalyzing processes were investigated, namely, a Sn-Pd process, and a self-assembled monolayer (SAM) process. In order to strengthen the adhesion force of the deposited films and the Si wafer, a Cr film was formed on both sides of the Si wafers. After the catalyzing process, electroless Ni deposited film was formed, followed by electrodeposited Au. It was confirmed that this structure worked as an antenna in the submillimeter-wave band.
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U2 - 10.1109/ESTC.2018.8546341
DO - 10.1109/ESTC.2018.8546341
M3 - Conference contribution
AN - SCOPUS:85060037303
T3 - 2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings
BT - 2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th Electronic System-Integration Technology Conference, ESTC 2018
Y2 - 18 September 2018 through 21 September 2018
ER -