Electrodeposition of Gold Electrode on Silicon Wafers for Submillimeter-wave Devices

Mikiko Saito, Hiroyuki Seto, Yoshiyuki Inoue, Jiro Hirokawa

研究成果: Conference contribution

抄録

The investigation of waveguide type submillimeter-wave (100 GHz-1 THz) antennas using Si wafers was performed. Si wafers were modified by the dry etching technique, followed by the through Si vias and Au films being deposited on the front, back, and the interior Si through a catalyzing process. The interior Si was used as the waveguide for the submillimeter-wavedevices. Using these modified Si wafers, two catalyzing processes were investigated, namely, a Sn-Pd process, and a self-assembled monolayer (SAM) process. In order to strengthen the adhesion force of the deposited films and the Si wafer, a Cr film was formed on both sides of the Si wafers. After the catalyzing process, electroless Ni deposited film was formed, followed by electrodeposited Au. It was confirmed that this structure worked as an antenna in the submillimeter-wave band.

本文言語English
ホスト出版物のタイトル2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781538668139
DOI
出版ステータスPublished - 2018 11 26
イベント7th Electronic System-Integration Technology Conference, ESTC 2018 - Dresden, Germany
継続期間: 2018 9 182018 9 21

出版物シリーズ

名前2018 7th Electronic System-Integration Technology Conference, ESTC 2018 - Proceedings

Other

Other7th Electronic System-Integration Technology Conference, ESTC 2018
国/地域Germany
CityDresden
Period18/9/1818/9/21

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Electrodeposition of Gold Electrode on Silicon Wafers for Submillimeter-wave Devices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル