Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source

Kouji Yasuda, Kazumi Saeki, Kazuma Maeda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

    研究成果: Conference contribution

    抄録

    Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF-KCl (eutectic composition, 45:55 mol%) after the introduction of SiCl4. Gaseous SiCl4 was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl4 exceeded 80% even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm-2 for 20 min in molten KF-KCl after the dissolution of 2.30 mol% SiCl4. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K2SiF6. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.

    元の言語English
    ホスト出版物のタイトルMolten Salts and Ionic Liquids 20
    出版者Electrochemical Society Inc.
    ページ593-601
    ページ数9
    75
    エディション15
    ISBN(電子版)9781607685395
    DOI
    出版物ステータスPublished - 2016
    イベントSymposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting - Honolulu, United States
    継続期間: 2016 10 22016 10 7

    Other

    OtherSymposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting
    United States
    Honolulu
    期間16/10/216/10/7

    Fingerprint

    Electrodeposition
    Molten materials
    Salts
    Dissolution
    Water
    Substrates
    Electrolysis
    Eutectics
    Solar cells
    Deposits
    Vapors
    Chemical analysis
    Gases

    ASJC Scopus subject areas

    • Engineering(all)

    これを引用

    Yasuda, K., Saeki, K., Maeda, K., Nohira, T., Hagiwara, R., & Homma, T. (2016). Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. : Molten Salts and Ionic Liquids 20 (15 版, 巻 75, pp. 593-601). Electrochemical Society Inc.. https://doi.org/10.1149/07515.0593ecst

    Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. / Yasuda, Kouji; Saeki, Kazumi; Maeda, Kazuma; Nohira, Toshiyuki; Hagiwara, Rika; Homma, Takayuki.

    Molten Salts and Ionic Liquids 20. 巻 75 15. 編 Electrochemical Society Inc., 2016. p. 593-601.

    研究成果: Conference contribution

    Yasuda, K, Saeki, K, Maeda, K, Nohira, T, Hagiwara, R & Homma, T 2016, Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. : Molten Salts and Ionic Liquids 20. 15 Edn, 巻. 75, Electrochemical Society Inc., pp. 593-601, Symposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07515.0593ecst
    Yasuda K, Saeki K, Maeda K, Nohira T, Hagiwara R, Homma T. Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. : Molten Salts and Ionic Liquids 20. 15 版 巻 75. Electrochemical Society Inc. 2016. p. 593-601 https://doi.org/10.1149/07515.0593ecst
    Yasuda, Kouji ; Saeki, Kazumi ; Maeda, Kazuma ; Nohira, Toshiyuki ; Hagiwara, Rika ; Homma, Takayuki. / Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source. Molten Salts and Ionic Liquids 20. 巻 75 15. 版 Electrochemical Society Inc., 2016. pp. 593-601
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    abstract = "Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF-KCl (eutectic composition, 45:55 mol{\%}) after the introduction of SiCl4. Gaseous SiCl4 was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl4 exceeded 80{\%} even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm-2 for 20 min in molten KF-KCl after the dissolution of 2.30 mol{\%} SiCl4. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K2SiF6. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.",
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    AU - Nohira, Toshiyuki

    AU - Hagiwara, Rika

    AU - Homma, Takayuki

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