Electrodeposition of Si film from water-soluble KF-KCl molten salt and feasibility of SiCl4 as a Si source

Kouji Yasuda, Kazumi Saeki, Kazuma Maeda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    Toward an establishment of a new production method of solar cell substrates, electrodeposition of Si was investigated in molten KF-KCl (eutectic composition, 45:55 mol%) after the introduction of SiCl4. Gaseous SiCl4 was directly introduced into the molten salt at 1023 K by a vapor transport method using Ar carrier gas. The dissolution ratio of SiCl4 exceeded 80% even with the use of a simple tube for the bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm-2 for 20 min in molten KF-KCl after the dissolution of 2.30 mol% SiCl4. Although compact Si layer was formed, the smoothness was lower compared to that obtained from the melt after the addition of K2SiF6. The anionic molar fraction is probably one of the factors affecting the morphology of deposit.

    本文言語English
    ホスト出版物のタイトルMolten Salts and Ionic Liquids 20
    出版社Electrochemical Society Inc.
    ページ593-601
    ページ数9
    75
    15
    ISBN(電子版)9781607685395
    DOI
    出版ステータスPublished - 2016
    イベントSymposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting - Honolulu, United States
    継続期間: 2016 10 22016 10 7

    Other

    OtherSymposium on Molten Salts and Ionic Liquids 20 - PRiME 2016/230th ECS Meeting
    CountryUnited States
    CityHonolulu
    Period16/10/216/10/7

    ASJC Scopus subject areas

    • Engineering(all)

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