Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy

C. E. Kendrick, R. Tilley, M. Kobayashi, R. J. Reeves, S. M. Durbin

研究成果: Conference contribution

抜粋

3-D branching GaN nanowires have been grown using the intermediate and Ga-rich growth regimes of plasma assisted molecular beam epitaxy. Evidence that the growth is due to an auto-catalytic VLS process is obtained through SEM images showing droplet termination heads, the composition of which is essentially pure Ga. TEM analysis revealed a defect free crystal structure, even in the trunk to branch junction. Cathodoluminescence from the trunk of the branching nanowires produced a strong luminescence feature at 3.44 eV, while a slight decrease in energy to 3.1 eV was observed at the interface between the nanowire and epilayer or kink site. No yellow luminescence was detected, further suggesting a defect free growth. Preliminary I-V measurements give mixed results, suggesting intrinsic n-type nanowires.

元の言語English
ホスト出版物のタイトルAdvances in III-V Nitride Semiconductor Materials and Devices
ページ270-275
ページ数6
出版物ステータスPublished - 2006 12 1
イベント2006 MRS Fall Meeting - Boston, MA, United States
継続期間: 2006 11 272006 11 30

出版物シリーズ

名前Materials Research Society Symposium Proceedings
955
ISSN(印刷物)0272-9172

Other

Other2006 MRS Fall Meeting
United States
Boston, MA
期間06/11/2706/11/30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Kendrick, C. E., Tilley, R., Kobayashi, M., Reeves, R. J., & Durbin, S. M. (2006). Electroluminescence from single 3D GaN nanowire grown by self-catalytic molecular beam epitaxy. : Advances in III-V Nitride Semiconductor Materials and Devices (pp. 270-275). (Materials Research Society Symposium Proceedings; 巻数 955).