Electroluminescence in silicon oxynitride

Hiromitsu Kato*, Akira Masuzawa, Hidefumi Sato, Yoshimichi Ohki, Makoto Fujimaki, Kwang Soo Seol, Takashi Noma

*この研究の対応する著者

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.

本文言語English
ページ402-406
ページ数5
出版ステータスPublished - 2000 12 1
イベント6th Interantional Conference on Properties and Applications of Dielectric Materials - Xi'an, China
継続期間: 2000 6 212000 6 26

Other

Other6th Interantional Conference on Properties and Applications of Dielectric Materials
CityXi'an, China
Period00/6/2100/6/26

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 材料化学

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