Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature

Takafumi Fujimoto; Keinan Gi; Stefano Bigoni; Michele Celebrano; Marco Finazzi; Giorgio Ferrari; Takahiro Shinada; Enrico Prati; Takashi Tanii

doi:10.1109/SNW50361.2020.9131655

Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature

Takafumi Fujimoto^*, Keinan Gi, Stefano Bigoni, Michele Celebrano, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Enrico Prati, Takashi Tanii

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

抄録

Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.

本文言語	English
ホスト出版物のタイトル	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	123-124
ページ数	2
ISBN（電子版）	9781728197357
DOI	https://doi.org/10.1109/SNW50361.2020.9131655
出版ステータス	Published - 2020 6月
イベント	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, United States 継続期間: 2020 6月 13 → 2020 6月 14

出版物シリーズ

名前	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conference

Conference	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
国/地域	United States
City	Honolulu
Period	20/6/13 → 20/6/14

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/SNW50361.2020.9131655

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引用スタイル

Fujimoto, T., Gi, K., Bigoni, S., Celebrano, M., Finazzi, M., Ferrari, G., Shinada, T., Prati, E., & Tanii, T. (2020). Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature. In 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 (pp. 123-124). [9131655] (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW50361.2020.9131655

Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature. / Fujimoto, Takafumi; Gi, Keinan; Bigoni, Stefano その他.

2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 123-124 9131655 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

研究成果: Conference contribution

Fujimoto, T, Gi, K, Bigoni, S, Celebrano, M, Finazzi, M, Ferrari, G, Shinada, T, Prati, E & Tanii, T 2020, Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature. in 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020., 9131655, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Institute of Electrical and Electronics Engineers Inc., pp. 123-124, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Honolulu, United States, 20/6/13. https://doi.org/10.1109/SNW50361.2020.9131655

Fujimoto T, Gi K, Bigoni S, Celebrano M, Finazzi M, Ferrari G その他. Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature. In 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 123-124. 9131655. (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020). doi: 10.1109/SNW50361.2020.9131655

Fujimoto, Takafumi ; Gi, Keinan ; Bigoni, Stefano その他. / Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature. 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 123-124 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

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abstract = "Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.",

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note = "Funding Information: ACKNOWLEDGMENTS This work was supported by JSPS KAKENHI (18H03766, 17H0251), and partly by the Waseda University Grant for Special Research Projects (2018K-214) and QUASIX Grant from Italian Space Agency. Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 ; Conference date: 13-06-2020 Through 14-06-2020",

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AU - Fujimoto, Takafumi

AU - Gi, Keinan

AU - Bigoni, Stefano

AU - Celebrano, Michele

AU - Finazzi, Marco

AU - Ferrari, Giorgio

AU - Shinada, Takahiro

AU - Prati, Enrico

AU - Tanii, Takashi

N1 - Funding Information: ACKNOWLEDGMENTS This work was supported by JSPS KAKENHI (18H03766, 17H0251), and partly by the Waseda University Grant for Special Research Projects (2018K-214) and QUASIX Grant from Italian Space Agency. Publisher Copyright: © 2020 IEEE.

PY - 2020/6

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N2 - Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.

AB - Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.

KW - electroluminescence

KW - erbium

KW - nanoscale pn diode

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