Electroluminescence of Er:O-doped nano pn diode in silicon-on-insulator and its current-voltage characteristics at room temperature

Takafumi Fujimoto, Keinan Gi, Stefano Bigoni, Michele Celebrano, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Enrico Prati, Takashi Tanii

研究成果: Conference contribution

抄録

Electroluminescence from erbium-doped nanoscale pn diodes was achieved. Decreasing the number of erbium ions in scaling light-emitting silicon devices decreases the emission intensity. This trend opens new possibility of single-photon emission-key function of quantum communication. Furthermore, doping by ion implantation takes advantage of controlling the number and position of erbium ions in the device. According to this trend, we fabricated pn-diodes with dimensions of telecom wavelength and observed the electroluminescence from the erbium doped region at the forward bias of 1.2 V. We discuss the photoemissivity and the current-voltage characteristics of the device, toward the single-photon emission.

本文言語English
ホスト出版物のタイトル2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
出版社Institute of Electrical and Electronics Engineers Inc.
ページ123-124
ページ数2
ISBN(電子版)9781728197357
DOI
出版ステータスPublished - 2020 6
イベント2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, United States
継続期間: 2020 6 132020 6 14

出版物シリーズ

名前2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conference

Conference2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
CountryUnited States
CityHonolulu
Period20/6/1320/6/14

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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