Electron affinity and surface re-ordering of homoepitaxial diamond (100)

Ka Wai Wong, Shuit Tong Lee, Raymund Wai Man Kwok, Yat Wah Lam, Hiroshi Kawarada

    研究成果: Article

    4 引用 (Scopus)

    抄録

    The change in electron affinity and the re-ordering of the diamond surface upon annealing of a homoepitaxially grown diamond (100) thin film were investigated by ultraviolet photoemission spectroscopy low energy electron diffraction (LEED), and Auger electron spectroscopy. When the sample was heated to ∼ 1250°C, the electron affinity of the sample changed from negative to positive and the LEED pattern changed from (2 × 1/1 × 2) to (1 × 1) When the sample was further annealed at ∼ 900°C, the electron affinity and the LEED pattern reverted to negative and (2 × 1/1 × 2) respectively. The sample was then heated to ∼ 1100°C, followed by annealed at ∼ 900°C again, and the same phenomenon was observed. These observations were considered to be associated with the disordering/re-ordering behavior of the diamond surface upon annealing.

    元の言語English
    ページ(範囲)5444-5447
    ページ数4
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    35
    発行部数10
    出版物ステータスPublished - 1996

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    Electron affinity
    Low energy electron diffraction
    electron affinity
    Diamonds
    diamonds
    Diffraction patterns
    electron diffraction
    Annealing
    diffraction patterns
    Diamond films
    Auger electron spectroscopy
    Photoelectron spectroscopy
    Ultraviolet spectroscopy
    annealing
    Auger spectroscopy
    electron spectroscopy
    energy
    Thin films
    photoelectric emission
    thin films

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)
    • Engineering(all)

    これを引用

    Electron affinity and surface re-ordering of homoepitaxial diamond (100). / Wong, Ka Wai; Lee, Shuit Tong; Kwok, Raymund Wai Man; Lam, Yat Wah; Kawarada, Hiroshi.

    :: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 35, 番号 10, 1996, p. 5444-5447.

    研究成果: Article

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    AU - Wong, Ka Wai

    AU - Lee, Shuit Tong

    AU - Kwok, Raymund Wai Man

    AU - Lam, Yat Wah

    AU - Kawarada, Hiroshi

    PY - 1996

    Y1 - 1996

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    AB - The change in electron affinity and the re-ordering of the diamond surface upon annealing of a homoepitaxially grown diamond (100) thin film were investigated by ultraviolet photoemission spectroscopy low energy electron diffraction (LEED), and Auger electron spectroscopy. When the sample was heated to ∼ 1250°C, the electron affinity of the sample changed from negative to positive and the LEED pattern changed from (2 × 1/1 × 2) to (1 × 1) When the sample was further annealed at ∼ 900°C, the electron affinity and the LEED pattern reverted to negative and (2 × 1/1 × 2) respectively. The sample was then heated to ∼ 1100°C, followed by annealed at ∼ 900°C again, and the same phenomenon was observed. These observations were considered to be associated with the disordering/re-ordering behavior of the diamond surface upon annealing.

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    KW - Surface ordering/re-ordering

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