The change in electron affinity and the re-ordering of the diamond surface upon annealing of a homoepitaxially grown diamond (100) thin film were investigated by ultraviolet photoemission spectroscopy low energy electron diffraction (LEED), and Auger electron spectroscopy. When the sample was heated to ∼ 1250°C, the electron affinity of the sample changed from negative to positive and the LEED pattern changed from (2 × 1/1 × 2) to (1 × 1) When the sample was further annealed at ∼ 900°C, the electron affinity and the LEED pattern reverted to negative and (2 × 1/1 × 2) respectively. The sample was then heated to ∼ 1100°C, followed by annealed at ∼ 900°C again, and the same phenomenon was observed. These observations were considered to be associated with the disordering/re-ordering behavior of the diamond surface upon annealing.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 1996|
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