抄録
The change in electron affinity and the re-ordering of the diamond surface upon annealing of a homoepitaxially grown diamond (100) thin film were investigated by ultraviolet photoemission spectroscopy low energy electron diffraction (LEED), and Auger electron spectroscopy. When the sample was heated to ∼ 1250°C, the electron affinity of the sample changed from negative to positive and the LEED pattern changed from (2 × 1/1 × 2) to (1 × 1) When the sample was further annealed at ∼ 900°C, the electron affinity and the LEED pattern reverted to negative and (2 × 1/1 × 2) respectively. The sample was then heated to ∼ 1100°C, followed by annealed at ∼ 900°C again, and the same phenomenon was observed. These observations were considered to be associated with the disordering/re-ordering behavior of the diamond surface upon annealing.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 5444-5447 |
| ページ数 | 4 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 35 |
| 発行部数 | 10 |
| 出版物ステータス | Published - 1996 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Engineering(all)
これを引用
Electron affinity and surface re-ordering of homoepitaxial diamond (100). / Wong, Ka Wai; Lee, Shuit Tong; Kwok, Raymund Wai Man; Lam, Yat Wah; Kawarada, Hiroshi.
：: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 35, 番号 10, 1996, p. 5444-5447.研究成果: Article
}
TY - JOUR
T1 - Electron affinity and surface re-ordering of homoepitaxial diamond (100)
AU - Wong, Ka Wai
AU - Lee, Shuit Tong
AU - Kwok, Raymund Wai Man
AU - Lam, Yat Wah
AU - Kawarada, Hiroshi
PY - 1996
Y1 - 1996
N2 - The change in electron affinity and the re-ordering of the diamond surface upon annealing of a homoepitaxially grown diamond (100) thin film were investigated by ultraviolet photoemission spectroscopy low energy electron diffraction (LEED), and Auger electron spectroscopy. When the sample was heated to ∼ 1250°C, the electron affinity of the sample changed from negative to positive and the LEED pattern changed from (2 × 1/1 × 2) to (1 × 1) When the sample was further annealed at ∼ 900°C, the electron affinity and the LEED pattern reverted to negative and (2 × 1/1 × 2) respectively. The sample was then heated to ∼ 1100°C, followed by annealed at ∼ 900°C again, and the same phenomenon was observed. These observations were considered to be associated with the disordering/re-ordering behavior of the diamond surface upon annealing.
AB - The change in electron affinity and the re-ordering of the diamond surface upon annealing of a homoepitaxially grown diamond (100) thin film were investigated by ultraviolet photoemission spectroscopy low energy electron diffraction (LEED), and Auger electron spectroscopy. When the sample was heated to ∼ 1250°C, the electron affinity of the sample changed from negative to positive and the LEED pattern changed from (2 × 1/1 × 2) to (1 × 1) When the sample was further annealed at ∼ 900°C, the electron affinity and the LEED pattern reverted to negative and (2 × 1/1 × 2) respectively. The sample was then heated to ∼ 1100°C, followed by annealed at ∼ 900°C again, and the same phenomenon was observed. These observations were considered to be associated with the disordering/re-ordering behavior of the diamond surface upon annealing.
KW - Annealing
KW - Electron affinity
KW - Homoepitaxial diamond
KW - Surface ordering/re-ordering
UR - http://www.scopus.com/inward/record.url?scp=0030262860&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030262860&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0030262860
VL - 35
SP - 5444
EP - 5447
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -