Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure

T. Wada*, T. Kanayama, S. Ichimura, Y. Sugiyama, M. Komuro

*この研究の対応する著者

研究成果: Conference contribution

抄録

The effects of low-energy electron irradiation on the two-dimensional electron gases (2DEG's) in AlGaAs/GaAs heterostructures have been investigated. Not only the electron mobility of the 2DEG's but also the two-dimensional (2D) carriers are found to be reduced by the electron irradiation with the incident energies between 3.5 k and 8 keV and the electron dose of 1×1016 and 1×1017/cm2. The degraded mobility and the removed carriers by the low-energy electron irradiation are shown to recover by isochronal annealing to some extent, but not completely below 400 °C. It is also found that considerable amount of scatterers which are created by an electron irradiation at room temperature are also created by an irradiation at 90 K. Comparing the experimental results with the Monte Carlo simulation, we speculate that the mobility degradation and the 2D carrier compensation are partly caused by the formation of complex defects in the GaAs buffer layer which are due to the excitations of core electrons of As, and that the mobility is further degraded by the formation of short-range scatterers in the heterointerface.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
出版社Publ by Materials Research Society
ページ67-72
ページ数6
ISBN(印刷版)1558992243
出版ステータスPublished - 1994 1月 1
外部発表はい
イベントProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA
継続期間: 1993 11月 291993 12月 1

出版物シリーズ

名前Materials Research Society Symposium Proceedings
325
ISSN(印刷版)0272-9172

Other

OtherProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
CityBoston, MA, USA
Period93/11/2993/12/1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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