Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure

T. Wada, T. Kanayama, Shingo Ichimura, Y. Sugiyama, M. Komuro

研究成果: Conference contribution

抄録

The effects of low-energy electron irradiation on the two-dimensional electron gases (2DEG's) in AlGaAs/GaAs heterostructures have been investigated. Not only the electron mobility of the 2DEG's but also the two-dimensional (2D) carriers are found to be reduced by the electron irradiation with the incident energies between 3.5 k and 8 keV and the electron dose of 1×1016 and 1×1017/cm2. The degraded mobility and the removed carriers by the low-energy electron irradiation are shown to recover by isochronal annealing to some extent, but not completely below 400 °C. It is also found that considerable amount of scatterers which are created by an electron irradiation at room temperature are also created by an irradiation at 90 K. Comparing the experimental results with the Monte Carlo simulation, we speculate that the mobility degradation and the 2D carrier compensation are partly caused by the formation of complex defects in the GaAs buffer layer which are due to the excitations of core electrons of As, and that the mobility is further degraded by the formation of short-range scatterers in the heterointerface.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
出版者Publ by Materials Research Society
ページ67-72
ページ数6
325
ISBN(印刷物)1558992243
出版物ステータスPublished - 1994 1 1
外部発表Yes
イベントProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA
継続期間: 1993 11 291993 12 1

Other

OtherProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
Boston, MA, USA
期間93/11/2993/12/1

Fingerprint

Two dimensional electron gas
Electron irradiation
electron irradiation
aluminum gallium arsenides
Heterojunctions
Electron beams
electron beams
degradation
Degradation
Electrons
Electron mobility
Buffer layers
scattering
electron mobility
electron gas
energy
electrons
buffers
Irradiation
Annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Wada, T., Kanayama, T., Ichimura, S., Sugiyama, Y., & Komuro, M. (1994). Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. : Materials Research Society Symposium Proceedings (巻 325, pp. 67-72). Publ by Materials Research Society.

Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. / Wada, T.; Kanayama, T.; Ichimura, Shingo; Sugiyama, Y.; Komuro, M.

Materials Research Society Symposium Proceedings. 巻 325 Publ by Materials Research Society, 1994. p. 67-72.

研究成果: Conference contribution

Wada, T, Kanayama, T, Ichimura, S, Sugiyama, Y & Komuro, M 1994, Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. : Materials Research Society Symposium Proceedings. 巻. 325, Publ by Materials Research Society, pp. 67-72, Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications, Boston, MA, USA, 93/11/29.
Wada T, Kanayama T, Ichimura S, Sugiyama Y, Komuro M. Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. : Materials Research Society Symposium Proceedings. 巻 325. Publ by Materials Research Society. 1994. p. 67-72
Wada, T. ; Kanayama, T. ; Ichimura, Shingo ; Sugiyama, Y. ; Komuro, M. / Electron beam induced degradation of 2DEG in AlGaAs/GaAs heterostructure. Materials Research Society Symposium Proceedings. 巻 325 Publ by Materials Research Society, 1994. pp. 67-72
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N2 - The effects of low-energy electron irradiation on the two-dimensional electron gases (2DEG's) in AlGaAs/GaAs heterostructures have been investigated. Not only the electron mobility of the 2DEG's but also the two-dimensional (2D) carriers are found to be reduced by the electron irradiation with the incident energies between 3.5 k and 8 keV and the electron dose of 1×1016 and 1×1017/cm2. The degraded mobility and the removed carriers by the low-energy electron irradiation are shown to recover by isochronal annealing to some extent, but not completely below 400 °C. It is also found that considerable amount of scatterers which are created by an electron irradiation at room temperature are also created by an irradiation at 90 K. Comparing the experimental results with the Monte Carlo simulation, we speculate that the mobility degradation and the 2D carrier compensation are partly caused by the formation of complex defects in the GaAs buffer layer which are due to the excitations of core electrons of As, and that the mobility is further degraded by the formation of short-range scatterers in the heterointerface.

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