Electron beam lithography on organosilane self-assembled monolayer resist

Takashi Tanii, Takumi Hosaka, Takeo Miyake, Iwao Ohdomari

研究成果: Article

16 引用 (Scopus)

抄録

We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.

元の言語English
ページ(範囲)4396-4397
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
発行部数7 A
DOI
出版物ステータスPublished - 2004 7

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Electron beam lithography
Self assembled monolayers
lithography
electron beams
sulfuric acid
Sulfuric acid
silicon dioxide
acids
Silica
hydrofluoric acid
Hydrofluoric acid
Substrates
vapor deposition
atomic force microscopy
Chemical vapor deposition
Electron beams
Atomic force microscopy
dosage
silicon
Silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

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title = "Electron beam lithography on organosilane self-assembled monolayer resist",
abstract = "We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.",
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T1 - Electron beam lithography on organosilane self-assembled monolayer resist

AU - Tanii, Takashi

AU - Hosaka, Takumi

AU - Miyake, Takeo

AU - Ohdomari, Iwao

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Y1 - 2004/7

N2 - We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.

AB - We report a result of a feasibility study on the application of an octadecyltrimethoxysilane self-assembled monolayer to a resist film for electron beam lithography. The self-assembled monolayer deposited on a silicon dioxide surface by chemical vapor deposition is resistant to both sulfuric acid and hydrofluoric acid. By immersing the electron-beam-irradiated surface into both acids, we successfully develop microstructural patterns in the self-assembled monolayer. In particular, we show the effectiveness of immersing the substrate into a sulfuric-acid-based solution for the development of the pattern. The relationship between the required dose and the developing time is estimated by measuring the morphology of the developed patterns by atomic force microscopy. The pattern in the self-assembled monolayer can be transferred into both the underlying silicon dioxide layer and the silicon substrate. These results indicate that the organosilane self-assembled monolayer serves as an alternative resist for electron beam lithography.

KW - Electron beam

KW - Lithography

KW - Octadecyltrimethoxysilane

KW - ODS

KW - Organosilane

KW - SAM

KW - Self-assembled monolayer

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