Electron conduction in GaAs atomic layer doped with Si

Toshiki Makimoto, Naoki Kobayashi, Yoshiji Horikoshi

研究成果: Article査読

14 被引用数 (Scopus)

抄録

This paper describes electronic transport characteristics of Si atomic-layer-doped GaAs grown by flowrate modulation epitaxy. This enables achievement of extremely heavy Si doping within one atomic layer without interupting growth. Electron concentrations are evaluated using Hall measurements and the phenomenon of electron concentration dependence on temperature and undoped GaAs layer thickness is explained by considering parallel conduction of electrons distributed in different levels with different mobilities.

本文言語English
ページ(範囲)5023-5026
ページ数4
ジャーナルJournal of Applied Physics
63
10
DOI
出版ステータスPublished - 1988
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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