Electron microscope studies of InxGav1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition

K. Kamei, W. M. Stobbs, K. Fujita

研究成果: Article

抄録

The microstructure of InxGa1-xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.

元の言語English
ページ(範囲)2025-2031
ページ数7
ジャーナルJournal of Electronic Materials
24
発行部数12
DOI
出版物ステータスPublished - 1995 12
外部発表Yes

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Metallorganic chemical vapor deposition
Relaxation processes
Dislocations (crystals)
metalorganic chemical vapor deposition
Electron microscopes
electron microscopes
Transmission electron microscopy
Microstructure
transmission electron microscopy
microstructure
gallium arsenide

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

これを引用

Electron microscope studies of InxGav1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition. / Kamei, K.; Stobbs, W. M.; Fujita, K.

:: Journal of Electronic Materials, 巻 24, 番号 12, 12.1995, p. 2025-2031.

研究成果: Article

Kamei, K. ; Stobbs, W. M. ; Fujita, K. / Electron microscope studies of InxGav1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition. :: Journal of Electronic Materials. 1995 ; 巻 24, 番号 12. pp. 2025-2031.
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KW - InGaAs

KW - metalorganic chemical vapor deposition (MOCVD)

KW - transmission electron microscopy (TEM)

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