Electron microscope studies of InxGav1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition

K. Kamei, W. M. Stobbs, K. Fujita

研究成果: Article査読

抄録

The microstructure of InxGa1-xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.

本文言語English
ページ(範囲)2025-2031
ページ数7
ジャーナルJournal of Electronic Materials
24
12
DOI
出版ステータスPublished - 1995 12
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)
  • 電子材料、光学材料、および磁性材料
  • 材料科学(全般)
  • 電子工学および電気工学

フィンガープリント

「Electron microscope studies of In<sub>x</sub>Gav<sub>1-x</sub>As/GaAs/Si grown by metalorganic chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル