Electron-phonon scattering effect on strained si nanowire FETs at low temperature

I. Tsuchida*, A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari

*この研究の対応する著者

研究成果: Conference contribution

抄録

Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by Id-Vbg characteristics at various temperatures. Transconductance (gm) and subthreshold slope are obtained from the Id-Vbg characteristics. The normalized gm (gm *) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on gm enhancement is different compared to that in bulk Si.

本文言語English
ホスト出版物のタイトルECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
出版社Electrochemical Society Inc.
ページ439-443
ページ数5
6
ISBN(電子版)9781607680932
ISBN(印刷版)9781566777438
DOI
出版ステータスPublished - 2009
イベント7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
継続期間: 2009 10月 52009 10月 7

出版物シリーズ

名前ECS Transactions
番号6
25
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
国/地域Austria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • 工学(全般)

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