Electron-spectroscopy and -diffraction study of the conductivity of CVD diamond (0 0 1) 2 × 1 surface

S. Kono*, T. Takano, M. Shimomura, T. Goto, K. Sato, T. Abukawa, M. Tachiki, H. Kawarada

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

A chemical vapor deposition as-grown diamond (001) single-domain 2×1 surface was studied by electron-spectroscopy and electron-diffraction in ultrahigh vacuum (UHV). In order to change the surface conductivity (SC) of the diamond in UHV, three annealing stages were used; without annealing, annealing at 300 °C and annealing at 550 °C. From low energy electron diffraction and X-ray photoelectron spectroscopic (XPS) studies, an existence of SC was suggested for the first two stages of annealing and an absence of SC was suggested for the last stage of annealing. Changes in C KVV Auger electron spectroscopic spectra, C KVV Auger electron diffraction (AED) patterns and C 1s XPS peak positions were noticed between the annealing stages at 300 and 550 °C. These changes are interpreted as such that the state of hydrogen involvement in a subsurface of diamond (001)2×1 changes as SC changes. In particular, the presence of local disorder in diamond configuration in SC subsurface is pointed out from C KVV AED. From C 1s XPS peak shifts, a lower bound for the Fermi-level for SC layers from the valence band top is presented to be ∼0.5 eV.

本文言語English
ページ(範囲)180-188
ページ数9
ジャーナルSurface Science
529
1-2
DOI
出版ステータスPublished - 2003 4月 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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