Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence

Tetsuya Nishimura*, Xue Lun Wang, Mutsuo Ogura, Atsushi Tackeuchi, Osamu Wada

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We report on the spin relaxation in GaAs-based quantum wires and wells studied at 50 K < T < 180 K by analyzing the circularly polarized photoluminescence transients. A 3.5-times shortening of the electron spin relaxation time is observed in GaAs/AlGaAs quantum wires compared with that in quantum wells at 180 K. The observed results suggest that a spin flip in the quantum wires is caused predominantly by the D'yakonov-Perel' effect due to spin-orbit interaction. The strong quantum confinement of electrons in the reduced dimensionality of the quantum structure leads to a larger spin splitting energy and a stronger temperature dependence of spin relaxation.

本文言語English
ページ(範囲)L941-L944
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
8 B
DOI
出版ステータスPublished - 1999 8月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

フィンガープリント

「Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル