Electron spin resonance study of interface trap states and charge carrier concentration in rubrene single-crystal field-effect transistors

Masaki Tsuji, Norimichi Arai, Kazuhiro Marumoto, Jun Takeya, Yukihiro Shimoi, Hisaaki Tanaka, Shin Ichi Kuroda, Taishi Takenobu, Yoshihiro Iwasa

    研究成果: Article査読

    10 被引用数 (Scopus)

    抄録

    Field-induced charge carriers at the semiconductor/dielectric interface of rubrene single-crystal field-effect transistors (RSC-FETs) were studied by ESR. We fabricated bottom-contact RSC-FETs to be used for ESR measurements by laminating RSCs onto SiO2 and polymer/SiO2 gate dielectric surfaces. The observed ESR spectra depict a minimal dependence on gate voltage, whose result is in sharp contrast to those obtained using RSC-FETs fabricated by the deposition of a parylene C gate dielectric. This behavior indicates that few deep trap levels are generated by the lamination technique. The dependence of ESR intensity on drain voltage was also investigated using gradual channel approximation.

    本文言語English
    論文番号085702
    ジャーナルApplied Physics Express
    4
    8
    DOI
    出版ステータスPublished - 2011 8

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

    フィンガープリント

    「Electron spin resonance study of interface trap states and charge carrier concentration in rubrene single-crystal field-effect transistors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル