抄録
Field-induced charge carriers at the semiconductor/dielectric interface of rubrene single-crystal field-effect transistors (RSC-FETs) were studied by ESR. We fabricated bottom-contact RSC-FETs to be used for ESR measurements by laminating RSCs onto SiO2 and polymer/SiO2 gate dielectric surfaces. The observed ESR spectra depict a minimal dependence on gate voltage, whose result is in sharp contrast to those obtained using RSC-FETs fabricated by the deposition of a parylene C gate dielectric. This behavior indicates that few deep trap levels are generated by the lamination technique. The dependence of ESR intensity on drain voltage was also investigated using gradual channel approximation.
本文言語 | English |
---|---|
論文番号 | 085702 |
ジャーナル | Applied Physics Express |
巻 | 4 |
号 | 8 |
DOI | |
出版ステータス | Published - 2011 8月 |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)