A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.
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