抄録
A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.
本文言語 | English |
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ページ(範囲) | 2313-2315 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 84 |
号 | 13 |
DOI | |
出版ステータス | Published - 2004 3 29 |
外部発表 | はい |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)