抄録
A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2313-2315 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 84 |
| 号 | 13 |
| DOI | |
| 出版ステータス | Published - 2004 3 29 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）