Electronic dispersion relations of monolayer hexagonal boron nitride formed on the Ni(111) surface

A. Nagashima*, N. Tejima, Y. Gamou, T. Kawai, C. Oshima

*この研究の対応する著者

研究成果: Article査読

229 被引用数 (Scopus)

抄録

Angle-resolved ultraviolet-photoelectron spectroscopy and angle-resolved secondary-electron emission spectroscopy have been carried out for a film of single-crystalline hexagonal boron nitride (h-BN) formed on the Ni(111) surface to investigate both the valence- and conduction-band structures. The thickness of the film studied in this experiment was 1 ML. The observed electronic dispersion relations were compared with some theoretical ones reported for bulk h-BN. Among these theoretical calculations, the one by Catellani et al. [Phys. Rev. B 36, 6105 (1987)] is in the best agreement with the present results. We have discussed the strength of the interfacial bond and the influence of this bond upon the electronic states of the monolayer h-BN film on the basis of the observed band structures for the BN film and a film of monolayer graphite formed on Ni(111).

本文言語English
ページ(範囲)4606-4613
ページ数8
ジャーナルPhysical Review B
51
7
DOI
出版ステータスPublished - 1995

ASJC Scopus subject areas

  • 凝縮系物理学

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