Electronic state formation by surface atom removal on a MoS 2 surface

Nagisa Kodama*, Tsuyoshi Hasegawa, Tohru Tsuruoka, Christian Joachim, Masakazu Aono

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Removal of a sulfur atom from the topmost layer of a MoS 2 surface forms electronic states in the band-gap of an inherently semiconducting material. Scanning tunneling spectroscopy measured at sulfur vacancies, which were made by sulfur atom removal using the high electrical field of a scanning tunneling microscope, shows stepwise increases in the current in a band-gap region, corresponding to the formation of electronic states. The periphery of sulfur vacancies also show linear current-voltage (I=V) characteristics, suggesting that electronic states in the periphery are modified due to the removal of sulfur atoms.

本文言語English
論文番号06FF07
ジャーナルJapanese journal of applied physics
51
6 PART 2
DOI
出版ステータスPublished - 2012 6 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Electronic state formation by surface atom removal on a MoS <sub>2</sub> surface」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル