The valence band electronic structures of Mn- and/or Fe-doped In 2O 3, i.e., In 2O 3:Mn, In 2O 3:Fe, and In 2O 3:(Mn, Fe), are investigated by photoemission yield measurements. Significant changes are observed in the threshold energy of photoemission, depending on the doped magnetic ions, which indicates that an additional occupied band appears above the top of the valence band of In 2O 3 owing to doping with Mn and/or Fe ions. It is confirmed that the order of the threshold energies of photoemission, E PET, is E PET(In 2O 3:Mn)<E PET(In 2O 3:(Mn, Fe))<E PET(In 2O 3:Fe)<E PET(In 2O 3). To gain a better understanding of these results, first-principles molecular orbital calculations are also carried out, which successfully explain the observed changes in the photoemission threshold energies.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering