Electronic structure analysis of Sb-doped BaSnO3

Daisuke Yamashita, Satoru Takefuji, Masato Tsubomoto, Tomoyuki Yamamoto

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.

本文言語English
ページ(範囲)33-36
ページ数4
ジャーナルMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
173
1-3
DOI
出版ステータスPublished - 2010 1 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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