Electronic structure of 3d transition-metal impurities in semiconductors

Takashi Mizokawa, Atsushi Fujimori

研究成果: Article

3 被引用数 (Scopus)

抄録

The d-d optical absorption spectra, photoemission spectra and donor and acceptor ionization energies of 3d transition-metal impurities in II-VI semiconductors have been investigated using the cluster and Anderson impurity models with configuration interaction. It is shown that both systematic chemical trends and multiplet effects are essential to explain the variations of the donor and acceptor levels with transition-metal elements.

本文言語English
ページ(範囲)417-418
ページ数2
ジャーナルJapanese journal of applied physics
32
S3
DOI
出版ステータスPublished - 1993 1
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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