TY - JOUR
T1 - Electronic structure of 3d transition-metal impurities in semiconductors
AU - Mizokawa, Takashi
AU - Fujimori, Atsushi
PY - 1993/1
Y1 - 1993/1
N2 - The d-d optical absorption spectra, photoemission spectra and donor and acceptor ionization energies of 3d transition-metal impurities in II-VI semiconductors have been investigated using the cluster and Anderson impurity models with configuration interaction. It is shown that both systematic chemical trends and multiplet effects are essential to explain the variations of the donor and acceptor levels with transition-metal elements.
AB - The d-d optical absorption spectra, photoemission spectra and donor and acceptor ionization energies of 3d transition-metal impurities in II-VI semiconductors have been investigated using the cluster and Anderson impurity models with configuration interaction. It is shown that both systematic chemical trends and multiplet effects are essential to explain the variations of the donor and acceptor levels with transition-metal elements.
KW - 3d transition-metal impurity in semiconductor
KW - D-d optical absorption
KW - Donor and acceptor levels
KW - Electronic structure
KW - Photoemission
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U2 - 10.7567/JJAPS.32S3.417
DO - 10.7567/JJAPS.32S3.417
M3 - Article
AN - SCOPUS:29144460204
SN - 0021-4922
VL - 32
SP - 417
EP - 418
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - S3
ER -