We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 2001 5月|
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