TY - JOUR
T1 - Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy
AU - Okabayashi, J.
AU - Kimura, A.
AU - Rader, O.
AU - Mizokawa, T.
AU - Fujimori, A.
AU - Hayashi, T.
AU - Tanaka, M.
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2001/5
Y1 - 2001/5
N2 - We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs.
AB - We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs.
KW - Density of states
KW - Energy-band dispersion
KW - GaMnAs
KW - Photoemission spectroscopy
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U2 - 10.1016/S1386-9477(01)00080-7
DO - 10.1016/S1386-9477(01)00080-7
M3 - Article
AN - SCOPUS:0035333390
VL - 10
SP - 192
EP - 195
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-3
ER -