Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy

J. Okabayashi*, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka

*この研究の対応する著者

研究成果: Article査読

41 被引用数 (Scopus)

抄録

We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs.

本文言語English
ページ(範囲)192-195
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
10
1-3
DOI
出版ステータスPublished - 2001 5
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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