Electronic structure of in the vicinity of the superconductor-insulator transition

A. Ino, C. Kim, M. Nakamura, T. Yoshida, T. Mizokawa, Z. Shen, A. Fujimori, T. Kakeshita, H. Eisaki, S. Uchida

研究成果: Article査読

181 被引用数 (Scopus)

抄録

We report on the result of angle-resolved photoemission study of (Formula presented) (LSCO) from an optimally doped superconductor (Formula presented) to an antiferromagnetic insulator (Formula presented) Near the superconductor-insulator transition (Formula presented) spectral weight is transferred with hole doping between two coexisting components, suggesting a microscopic inhomogeneity of the doped-hole distribution. For the underdoped LSCO (Formula presented) the dispersive band crossing the Fermi level becomes invisible in the (Formula presented) direction unlike (Formula presented) These observations may be reconciled with the evolution of holes in the insulator into fluctuating stripes in the superconductor.

本文言語English
ページ(範囲)4137-4141
ページ数5
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
62
6
DOI
出版ステータスPublished - 2000
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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