Electronic structure of InN observed by Shubnikov-de Haas measurements

T. Inushima*, M. Higashiwaki, T. Matsui, T. Takenobu, M. Motokawa

*この研究の対応する著者

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

We investigated the electronic structure of degenerated InN by Shubnikov-de Haas (SdH) measurements for the first time. The SdH oscillation depends on the angle between the crystal c-axis and the applied field and has two components; one originates from the spherical Fermi surface with effective mass of about 0.085 m0, the other from the layered structure spread in the a-b plane. In the case of Sidoped InN with the carrier density of 2.5×10 18 cm -3, about half electron density exists on the a-b plane.

本文言語English
ホスト出版物のタイトルPhysica Status Solidi C: Conferences
ページ2822-2825
ページ数4
7
DOI
出版ステータスPublished - 2003
外部発表はい
イベント5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
継続期間: 2003 5月 252003 5月 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
国/地域Japan
CityNara
Period03/5/2503/5/30

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料
  • 材料化学

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