We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版物ステータス||Published - 2002 4 15|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics