Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs

J. Okabayashi, Takashi Mizokawa, D. D. Sarma, A. Fujimori, T. Slupinski, A. Oiwa, H. Munekata

研究成果: Article

51 引用 (Scopus)

抄録

We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.

元の言語English
記事番号161203
ページ(範囲)1612031-1612034
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
65
発行部数16
出版物ステータスPublished - 2002 4 15
外部発表Yes

Fingerprint

Photoelectron spectroscopy
Electronic structure
photoelectric emission
electronic structure
Valence bands
Transport properties
spectroscopy
Magnetic properties
Optical properties
transport properties
Impurities
magnetic properties
valence
optical properties
impurities
Diluted magnetic semiconductors

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Okabayashi, J., Mizokawa, T., Sarma, D. D., Fujimori, A., Slupinski, T., Oiwa, A., & Munekata, H. (2002). Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs. Physical Review B - Condensed Matter and Materials Physics, 65(16), 1612031-1612034. [161203].

Electronic structure of In1-xMnxAs studied by photoemission spectroscopy : Comparison with Ga1-xMnxAs. / Okabayashi, J.; Mizokawa, Takashi; Sarma, D. D.; Fujimori, A.; Slupinski, T.; Oiwa, A.; Munekata, H.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 65, 番号 16, 161203, 15.04.2002, p. 1612031-1612034.

研究成果: Article

Okabayashi, J, Mizokawa, T, Sarma, DD, Fujimori, A, Slupinski, T, Oiwa, A & Munekata, H 2002, 'Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs', Physical Review B - Condensed Matter and Materials Physics, 巻. 65, 番号 16, 161203, pp. 1612031-1612034.
Okabayashi, J. ; Mizokawa, Takashi ; Sarma, D. D. ; Fujimori, A. ; Slupinski, T. ; Oiwa, A. ; Munekata, H. / Electronic structure of In1-xMnxAs studied by photoemission spectroscopy : Comparison with Ga1-xMnxAs. :: Physical Review B - Condensed Matter and Materials Physics. 2002 ; 巻 65, 番号 16. pp. 1612031-1612034.
@article{43dccc80ab554d2e91c46f79086353b3,
title = "Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs",
abstract = "We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.",
author = "J. Okabayashi and Takashi Mizokawa and Sarma, {D. D.} and A. Fujimori and T. Slupinski and A. Oiwa and H. Munekata",
year = "2002",
month = "4",
day = "15",
language = "English",
volume = "65",
pages = "1612031--1612034",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Electronic structure of In1-xMnxAs studied by photoemission spectroscopy

T2 - Comparison with Ga1-xMnxAs

AU - Okabayashi, J.

AU - Mizokawa, Takashi

AU - Sarma, D. D.

AU - Fujimori, A.

AU - Slupinski, T.

AU - Oiwa, A.

AU - Munekata, H.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.

AB - We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.

UR - http://www.scopus.com/inward/record.url?scp=0037091881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037091881&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037091881

VL - 65

SP - 1612031

EP - 1612034

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 16

M1 - 161203

ER -