Electronic structure of Mott-Hubbard-type transition-metal oxides

A. Fujimori*, T. Yoshida, K. Okazaki, T. Tsujioka, K. Kobayashi, T. Mizokawa, M. Onoda, T. Katsufuji, Y. Taguchi, Y. Tokura

*この研究の対応する著者

研究成果査読

26 被引用数 (Scopus)

抄録

Oxides of Ti and V belong to the Mott-Hubbard regime of the Zaanen-Sawatzky-Allen classification scheme of transition-metal compounds and have simple electronic structures which allow us to study the effect of electron correlation in a transparent way. In this article, we make an overview of our recent photoemission studies on Ti and V oxides, with special emphasis on metal-insulator transitions induced by the control of the width and the filling of the Ti and V 3d bands. Spectroscopic data yield spectral weight transfer between the coherent and incoherent parts of the d band, the spectral intensities at the Fermi level and the chemical potential shifts as functions of band filling. We show that such spectroscopic information well corresponds to the thermodynamic and transport properties and is necessary to understand electron correlation phenomena from a fundamental viewpoint.

本文言語English
ページ(範囲)277-286
ページ数10
ジャーナルJournal of Electron Spectroscopy and Related Phenomena
117-118
DOI
出版ステータスPublished - 2001 6
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 放射線
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 分光学
  • 物理化学および理論化学

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