Electronic structure of NiAs-type MnTe studied by photoemission and inverse-photoemission spectroscopies

H. Sato, M. Tamura, N. Happo, T. Mihara, M. Taniguchi, T. Mizokawa, A. Fujimori, Y. Ueda

研究成果: Article査読

24 被引用数 (Scopus)

抄録

Valence-band and conduction-band structures of NiAs-type MnTe have been investigated by means of ultraviolet photoemission and inverse-photoemmion epectroscopies. Based on the comparison with the results of band-theory, features observed at -3.7 and 2.9 eV relative to the valence-band maximum (VBM) are assigned to emission from the Mn 3d↑ and 3d↓ states with fairly localized character, providing a spin-exchange splitting energy of 6.6 ± 0.2 eV. On the other hand, the Mn 3d photoemission and inverse-photoemission spectra have been calculated in terms of a configuration interaction theory using a MnTe6 model cluster, to interpret the whole features of the experimental spectra including multielectron satellites. The Mn 3d spectral features at -12 to -6, -6 ∼ 0 and 2.9eV relative to the VBM are attributed predominantly to transitions into the d4, d5 L and d6 final state configurations, respectively, where L represents a ligand hole.

本文言語English
ページ(範囲)921-924
ページ数4
ジャーナルSolid State Communications
92
11
DOI
出版ステータスPublished - 1994 12
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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