Electronic structures of halogenated polysilanes

H. Motoyama, K. Takeda, K. Shiraishi

研究成果: Conference article査読

13 被引用数 (Scopus)

抄録

The electronic structures of halogenated polysilanes (PSi), whose side chains are replaced by halogen (X) atoms, have been theoretically investigated based on the first-principles calculations. It was found that non-bonding (n) electrons localizing at the X atom produce an important orbital mixing with the σ valence electrons delocalized in the direction of the PSi skeleton (σ-n mixing). This σ-n mixing splits the top of the valence bands, and creates unoccupied states in the band gap. This valence-band-splitting effectively narrows the band gap to the visible range, and the unoccupied state in the band gap has the potential to be an electron acceptor. Moreover, we also investigated several replacement patterns as well as the kind of replaced halogen species (X=F, Cl, Br, I). The dispersion and energy position of the unoccupied state(s) can be artificially tuned by these chemical modifications. Thus, halogenation can change PSi into optoelectronic polymers with visible photoluminescence.

本文言語English
ページ(範囲)385-390
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
486
出版ステータスPublished - 1998 1 1
イベントProceedings of the 1997 MRS Symposium - Boston, MA, USA
継続期間: 1997 12 11997 12 3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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