TY - GEN
T1 - Electronic structures of heavily boron-doped superconducting diamond films
AU - Yokoya, Takayoshi
AU - Okazaki, Hiroyuki
AU - Nakamura, Tetsuya
AU - Matsushita, Tomohiro
AU - Muro, Takayuki
AU - Ikenaga, Eiji
AU - Kobata, Masaaki
AU - Kobayashi, Keisuke
AU - Takeuchi, Akihisa
AU - Awaji, Akihiro
AU - Takano, Yoshihiko
AU - Nagao, Masanori
AU - Takenouchi, Tomohiro
AU - Kawarada, Hiroshi
AU - Oguchi, Tamio
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.
AB - Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.
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M3 - Conference contribution
AN - SCOPUS:40949146181
SN - 9781558999138
T3 - Materials Research Society Symposium Proceedings
SP - 39
EP - 46
BT - Diamond Electronics-Fundamentals to Applications
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 30 November 2006
ER -