Electronic structures of heavily boron-doped superconducting diamond films

Takayoshi Yokoya*, Hiroyuki Okazaki, Tetsuya Nakamura, Tomohiro Matsushita, Takayuki Muro, Eiji Ikenaga, Masaaki Kobata, Keisuke Kobayashi, Akihisa Takeuchi, Akihiro Awaji, Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hiroshi Kawarada, Tamio Oguchi

*この研究の対応する著者

研究成果: Conference contribution

抄録

Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.

本文言語English
ホスト出版物のタイトルDiamond Electronics-Fundamentals to Applications
ページ39-46
ページ数8
出版ステータスPublished - 2007
イベント2006 MRS Fall Meeting - Boston, MA, United States
継続期間: 2006 11月 272006 11月 30

出版物シリーズ

名前Materials Research Society Symposium Proceedings
956
ISSN(印刷版)0272-9172

Other

Other2006 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period06/11/2706/11/30

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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