Energetics in the growth mechanism of semiconductor heteroepitaxy

N. Miyagishima, K. Okajima, N. Oyama, K. Shiraishi, K. Takeda, T. Ohno, T. Ito

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We phenomenologically investigate the growth behavior in lattice-mismatched heteroepitaxy. We focus on the critical thickness of misfit dislocations (MDs) in Volmer-Weber (VW) and Stranski-Krastanov (SK) modes. Calculated results show that critical thickness in VW mode is much smaller than that in SK mode. This is because energy loss in MD formation in VW islands is smaller than that in SK islands due to the absence of wetting layers during VW growth.

本文言語English
ページ(範囲)1599-1602
ページ数4
ジャーナルJournal of Crystal Growth
237-239
1 4 II
DOI
出版ステータスPublished - 2002 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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