Energy relaxation time of hot carriers photoexcited in InGaN

T. Ushiyama, T. Toizumi, Y. Nakazato, A. Tackeuchi

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

The energy relaxation time of hot carriers photoexcited in bulk InGaN is measured. The time-resolved pump and probe transmission measurements with subpicosecond time resolution show that the hot-carrier relaxation time is 0.92 ps at 15 K. The hot-carrier relaxation time becomes significantly shorter at higher temperatures. At temperatures higher than 150 K, there are no meaningful differences between rise times. This strong temperature dependence indicates that electron-phonon scattering dominates the carrier relaxation process.

本文言語English
ページ(範囲)143-145
ページ数3
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
5
1
DOI
出版ステータスPublished - 2008
イベント15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
継続期間: 2007 7 232007 7 27

ASJC Scopus subject areas

  • 凝縮系物理学

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