抜粋
The energy relaxation time of hot carriers photoexcited in bulk InGaN is measured. The time-resolved pump and probe transmission measurements with subpicosecond time resolution show that the hot-carrier relaxation time is 0.92 ps at 15 K. The hot-carrier relaxation time becomes significantly shorter at higher temperatures. At temperatures higher than 150 K, there are no meaningful differences between rise times. This strong temperature dependence indicates that electron-phonon scattering dominates the carrier relaxation process.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 143-145 |
| ページ数 | 3 |
| ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 巻 | 5 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | Published - 2008 6 30 |
| イベント | 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan 継続期間: 2007 7 23 → 2007 7 27 |
ASJC Scopus subject areas
- Condensed Matter Physics
フィンガープリント Energy relaxation time of hot carriers photoexcited in InGaN' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Ushiyama, T., Toizumi, T., Nakazato, Y., & Tackeuchi, A. (2008). Energy relaxation time of hot carriers photoexcited in InGaN. Physica Status Solidi (C) Current Topics in Solid State Physics, 5(1), 143-145. https://doi.org/10.1002/pssc.200776583