TY - JOUR
T1 - Energy relaxation time of hot carriers photoexcited in InGaN
AU - Ushiyama, T.
AU - Toizumi, T.
AU - Nakazato, Y.
AU - Tackeuchi, A.
N1 - Funding Information:
This work was aided by a grant from the Foundation for Cardiovascular Research. Received for publication June 22, 1955. *Resident in Internal Medicine, Graduate Hospital of the University of Pennsylvania. **Fellow in Cardiology, Graduate Hospital of the University of Pennsylvania. ***Director, Division of Peripheral Vascular Diseases, Graduate Hospital; and Assistant in Medicine, Graduate School of Medicine of the University of Pennsylvania. ****Director, Division of Cardiology, Graduate Hospital: and Professor of Clinical Graduate School of Medicine of the University of Pennsylvania.
PY - 2008
Y1 - 2008
N2 - The energy relaxation time of hot carriers photoexcited in bulk InGaN is measured. The time-resolved pump and probe transmission measurements with subpicosecond time resolution show that the hot-carrier relaxation time is 0.92 ps at 15 K. The hot-carrier relaxation time becomes significantly shorter at higher temperatures. At temperatures higher than 150 K, there are no meaningful differences between rise times. This strong temperature dependence indicates that electron-phonon scattering dominates the carrier relaxation process.
AB - The energy relaxation time of hot carriers photoexcited in bulk InGaN is measured. The time-resolved pump and probe transmission measurements with subpicosecond time resolution show that the hot-carrier relaxation time is 0.92 ps at 15 K. The hot-carrier relaxation time becomes significantly shorter at higher temperatures. At temperatures higher than 150 K, there are no meaningful differences between rise times. This strong temperature dependence indicates that electron-phonon scattering dominates the carrier relaxation process.
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U2 - 10.1002/pssc.200776583
DO - 10.1002/pssc.200776583
M3 - Conference article
AN - SCOPUS:45749122646
VL - 5
SP - 143
EP - 145
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 1
T2 - 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15
Y2 - 23 July 2007 through 27 July 2007
ER -