Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO2/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO 2/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V μm-1 at the emission current density of 0.1 μA cm-2 and a threshold field of 1.67 V μm-1 at the emission current density of 1.0 mA cm-2. The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate.
|出版ステータス||Published - 2008 10月 15|
ASJC Scopus subject areas
- 化学 (全般)