Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS<inf>2</inf> thin film

Yuka Tsuboi, Feijiu Wang, Daichi Kozawa, Kazuma Funahashi, Shinichiro Mouri, Yuhei Miyauchi, Taishi Takenobu, Kazunari Matsuda

    研究成果: Article

    78 引用 (Scopus)

    抜粋

    Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS<inf>2</inf> thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS<inf>2</inf> layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS<inf>2</inf>/n-Si solar cell.

    元の言語English
    ページ(範囲)14476-14482
    ページ数7
    ジャーナルNanoscale
    7
    発行部数34
    DOI
    出版物ステータスPublished - 2015 9 14

      フィンガープリント

    ASJC Scopus subject areas

    • Materials Science(all)

    これを引用

    Tsuboi, Y., Wang, F., Kozawa, D., Funahashi, K., Mouri, S., Miyauchi, Y., Takenobu, T., & Matsuda, K. (2015). Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS<inf>2</inf> thin film. Nanoscale, 7(34), 14476-14482. https://doi.org/10.1039/c5nr03046c