Enhanced piezoelectricity in YbGaN films near phase boundary

Takahiko Yanagitani, Masashi Suzuki

研究成果: Article査読

19 被引用数 (Scopus)

抄録

Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga 0.70N film near the phase boundary exhibited a maximum kt of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

本文言語English
論文番号082911
ジャーナルApplied Physics Letters
104
8
DOI
出版ステータスPublished - 2014 2月 24
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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