Enhanced piezoelectricity in YbGaN films near phase boundary

Takahiko Yanagitani; Masashi Suzuki

doi:10.1063/1.4866969

Enhanced piezoelectricity in YbGaN films near phase boundary

Takahiko Yanagitani, Masashi Suzuki

研究成果: Article › 査読

19 被引用数 (Scopus)

抄録

Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient k_t for the Yb_xGa_1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb_0.30Ga _0.70N film near the phase boundary exhibited a maximum k_t of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

本文言語	English
論文番号	082911
ジャーナル	Applied Physics Letters
巻	104
号	8
DOI	https://doi.org/10.1063/1.4866969
出版ステータス	Published - 2014 2月 24
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.4866969

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Enhanced piezoelectricity in YbGaN films near phase boundary

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