Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Arup Neogi, Henry Everitt, Hadis Morkoç, Takamasa Kuroda, Atsushi Tackeuchi

    研究成果: Article

    11 引用 (Scopus)

    抄録

    Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

    元の言語English
    ページ(範囲)10-14
    ページ数5
    ジャーナルIEEE Transactions on Nanotechnology
    2
    発行部数1
    DOI
    出版物ステータスPublished - 2003 3

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    Molecular beam epitaxy
    Semiconductor quantum dots
    Photoluminescence spectroscopy

    ASJC Scopus subject areas

    • Engineering(all)
    • Hardware and Architecture

    これを引用

    Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy. / Neogi, Arup; Everitt, Henry; Morkoç, Hadis; Kuroda, Takamasa; Tackeuchi, Atsushi.

    :: IEEE Transactions on Nanotechnology, 巻 2, 番号 1, 03.2003, p. 10-14.

    研究成果: Article

    Neogi, Arup ; Everitt, Henry ; Morkoç, Hadis ; Kuroda, Takamasa ; Tackeuchi, Atsushi. / Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy. :: IEEE Transactions on Nanotechnology. 2003 ; 巻 2, 番号 1. pp. 10-14.
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    AU - Tackeuchi, Atsushi

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