Enhancement of Electroluminescence from n-Type Porous Silicon and Its Photoelectrochemical Behavior

研究成果: Article査読

13 被引用数 (Scopus)

抄録

In a study of the electroluminescence (EL) of porous silicon on an n-type Si wafer using an S2O82- electrolyte solution, the addition of C3H5OH to the solution was found to enhance the intensity of EL from the porous silicon. The porous silicon structure was classified into two types which were prepared based on whether the anodizing current density for forming the porous n-Si was above or below the saturated photocurrent. A single layer of fine pores was formed galvanostatically with illumination at a current density below the saturated photocurrent density, and a double layer of fine and rough pores was formed under the same conditions but at a current density above the saturated photocurrent density. The electrochemical and enhanced electroluminescent properties of the two types of porous silicon were studied.

本文言語English
ページ(範囲)1874-1880
ページ数7
ジャーナルJournal of the Electrochemical Society
142
6
DOI
出版ステータスPublished - 1995

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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