Enhancement of giant magnetoresistance by L21 ordering in Co2Fe(Ge0.5Ga0.5) Heusler alloy current-perpendicular-to-plane pseudo spin valves

S. Li; Y. K. Takahashi; T. Furubayashi; K. Hono

doi:10.1063/1.4816382

Enhancement of giant magnetoresistance by L2₁ ordering in Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy current-perpendicular-to-plane pseudo spin valves

S. Li^*, Y. K. Takahashi, T. Furubayashi, K. Hono

^*この研究の対応する著者

研究成果: Article › 査読

79 被引用数 (Scopus)

抄録

We report large magnetoresistance (MR) output in fully epitaxial Co ₂Fe(Ge_0.5Ga_0.5)/Ag/Co₂Fe(Ge _0.5Ga_0.5) current-perpendicular-to-plane pseudo spin valves. The resistance-area product change (ΔRA) of 12 mΩμm ² at room temperature (RT), equivalent to MR ratio of 57%, and ΔRA = 33 mΩμm² at 10 K, equivalent to MR ratio of 183%, were obtained by using L2₁-ordered Co₂Fe(Ge _0.5Ga_0.5) ferromagnetic electrodes. The bulk spin scattering asymmetry (β) were estimated to be ∼0.83 at RT and ∼0.93 at 10 K for the L2₁-ordered Co₂Fe(Ge_0.5Ga _0.5) films by the Valet-Fert model, indicating that the L2 ₁-ordered Co₂FeGe_0.5Ga_0.5 Heusler alloy is virtually half-metal at 10 K, but its half-metallicity is degraded at RT.

本文言語	English
論文番号	042405
ジャーナル	Applied Physics Letters
巻	103
号	4
DOI	https://doi.org/10.1063/1.4816382
出版ステータス	Published - 2013 7 22
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.4816382

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abstract = "We report large magnetoresistance (MR) output in fully epitaxial Co 2Fe(Ge0.5Ga0.5)/Ag/Co2Fe(Ge 0.5Ga0.5) current-perpendicular-to-plane pseudo spin valves. The resistance-area product change (ΔRA) of 12 mΩμm 2 at room temperature (RT), equivalent to MR ratio of 57%, and ΔRA = 33 mΩμm2 at 10 K, equivalent to MR ratio of 183%, were obtained by using L21-ordered Co2Fe(Ge 0.5Ga0.5) ferromagnetic electrodes. The bulk spin scattering asymmetry (β) were estimated to be ∼0.83 at RT and ∼0.93 at 10 K for the L21-ordered Co2Fe(Ge0.5Ga 0.5) films by the Valet-Fert model, indicating that the L2 1-ordered Co2FeGe0.5Ga0.5 Heusler alloy is virtually half-metal at 10 K, but its half-metallicity is degraded at RT.",

author = "S. Li and Takahashi, {Y. K.} and T. Furubayashi and K. Hono",

note = "Funding Information: We thank Dr. Y. Sakuraba for valuable discussions and S. Kasai for assistance on low temperature measurement. This work was in part supported by the Grant-in-Aid for Scientific Research (A) (Grant No. 22246091) and Advanced Storage Technology Consortium (ASTC), IDEMA. ",

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AU - Furubayashi, T.

AU - Hono, K.

N1 - Funding Information: We thank Dr. Y. Sakuraba for valuable discussions and S. Kasai for assistance on low temperature measurement. This work was in part supported by the Grant-in-Aid for Scientific Research (A) (Grant No. 22246091) and Advanced Storage Technology Consortium (ASTC), IDEMA.

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N2 - We report large magnetoresistance (MR) output in fully epitaxial Co 2Fe(Ge0.5Ga0.5)/Ag/Co2Fe(Ge 0.5Ga0.5) current-perpendicular-to-plane pseudo spin valves. The resistance-area product change (ΔRA) of 12 mΩμm 2 at room temperature (RT), equivalent to MR ratio of 57%, and ΔRA = 33 mΩμm2 at 10 K, equivalent to MR ratio of 183%, were obtained by using L21-ordered Co2Fe(Ge 0.5Ga0.5) ferromagnetic electrodes. The bulk spin scattering asymmetry (β) were estimated to be ∼0.83 at RT and ∼0.93 at 10 K for the L21-ordered Co2Fe(Ge0.5Ga 0.5) films by the Valet-Fert model, indicating that the L2 1-ordered Co2FeGe0.5Ga0.5 Heusler alloy is virtually half-metal at 10 K, but its half-metallicity is degraded at RT.

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