抄録
The effect of W on the nanovoid formation in annealed amorphous Al 2O3 was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al2O3 (without W) and resistance-heating deposited Al2O3 (with 10 at. W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al 2O3 showed that the introduction of W into amorphous Al2O3 brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al2O3 prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.
| 元の言語 | English |
|---|---|
| 記事番号 | 064324 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 110 |
| 発行部数 | 6 |
| DOI | |
| 出版物ステータス | Published - 2011 9 15 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Enhancement of nanovoid formation in annealed amorphous Al 2O3 including W. / Nakamura, R.; Ishimaru, M.; Hirata, Akihiko; Sato, K.; Tane, M.; Kimizuka, H.; Shudo, T.; Konno, T. J.; Nakajima, H.
：: Journal of Applied Physics, 巻 110, 番号 6, 064324, 15.09.2011.研究成果: Article
}
TY - JOUR
T1 - Enhancement of nanovoid formation in annealed amorphous Al 2O3 including W
AU - Nakamura, R.
AU - Ishimaru, M.
AU - Hirata, Akihiko
AU - Sato, K.
AU - Tane, M.
AU - Kimizuka, H.
AU - Shudo, T.
AU - Konno, T. J.
AU - Nakajima, H.
PY - 2011/9/15
Y1 - 2011/9/15
N2 - The effect of W on the nanovoid formation in annealed amorphous Al 2O3 was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al2O3 (without W) and resistance-heating deposited Al2O3 (with 10 at. W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al 2O3 showed that the introduction of W into amorphous Al2O3 brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al2O3 prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.
AB - The effect of W on the nanovoid formation in annealed amorphous Al 2O3 was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al2O3 (without W) and resistance-heating deposited Al2O3 (with 10 at. W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al 2O3 showed that the introduction of W into amorphous Al2O3 brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al2O3 prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.
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UR - http://www.scopus.com/inward/citedby.url?scp=80053537674&partnerID=8YFLogxK
U2 - 10.1063/1.3639290
DO - 10.1063/1.3639290
M3 - Article
AN - SCOPUS:80053537674
VL - 110
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
M1 - 064324
ER -