Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

A. Neogi; C. W. Lee; H. O. Everitt; T. Kuroda; A. Tackeuchi; E. Yablonovitch

Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

A. Neogi^*, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, E. Yablonovitch

^*この研究の対応する著者

研究成果: Paper › 査読

1 被引用数 (Scopus)

抄録

Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.

本文言語	English
ページ	258-259
ページ数	2
出版ステータス	Published - 2002 1月 1
外部発表	はい
イベント	Quantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States 継続期間: 2002 5月 19 → 2002 5月 24

Conference

Conference	Quantum Electronics and Laser Science (QELS) 2002
国/地域	United States
City	Long Beach, CA
Period	02/5/19 → 02/5/24

ASJC Scopus subject areas

物理学および天文学（全般）

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引用スタイル

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title = "Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling",

abstract = "Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.",

author = "A. Neogi and Lee, {C. W.} and Everitt, {H. O.} and T. Kuroda and A. Tackeuchi and E. Yablonovitch",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "258--259",

note = "Quantum Electronics and Laser Science (QELS) 2002 ; Conference date: 19-05-2002 Through 24-05-2002",

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TY - CONF

T1 - Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

AU - Neogi, A.

AU - Lee, C. W.

AU - Everitt, H. O.

AU - Kuroda, T.

AU - Tackeuchi, A.

AU - Yablonovitch, E.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.

AB - Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.

UR - http://www.scopus.com/inward/record.url?scp=0036360560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036360560&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036360560

SP - 258

EP - 259

T2 - Quantum Electronics and Laser Science (QELS) 2002

Y2 - 19 May 2002 through 24 May 2002

ER -

Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

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Conference

ASJC Scopus subject areas

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