Enhancing the photovoltaic performance of hybrid heterojunction solar cells by passivation of silicon surface via a simple 1-min annealing process

Rongbin Xie, Naoya Ishijima, Hisashi Sugime, Suguru Noda

研究成果: Article

抄録

Solution-based heterojunction technology is emerging for facile fabrication of silicon (Si)-based solar cells. Surface passivation of Si substrate has been well established to improve the photovoltaic (PV) performance for the conventional bulk Si cells. However, the impact is still not seen for the heterojunction cells. Here, we developed a facile and repeatable method to passivate the Si surface by a simple 1-min annealing process in vacuum, and integrated it into the heterojunction cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) or carbon nanotube (CNT). A thin and dense oxide layer was introduced on the Si surface to provide a high-quality hole transport layer and passivation layer. The layer enhanced the power conversion efficiency from 9.34% to 12.87% (1.38-times enhancement) for the PEDOT:PSS/n-Si cells and from 6.61% to 8.52% (1.29-times enhancement) for the CNT/n-Si cells. The simple passivation is a promising way to enhance the PV performance of the Si cells with various solution-based heterojunctions.

元の言語English
記事番号12051
ジャーナルScientific reports
9
発行部数1
DOI
出版物ステータスPublished - 2019 12 1

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Silicon
Carbon Nanotubes
Vacuum
Oxides
Technology

ASJC Scopus subject areas

  • General

これを引用

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abstract = "Solution-based heterojunction technology is emerging for facile fabrication of silicon (Si)-based solar cells. Surface passivation of Si substrate has been well established to improve the photovoltaic (PV) performance for the conventional bulk Si cells. However, the impact is still not seen for the heterojunction cells. Here, we developed a facile and repeatable method to passivate the Si surface by a simple 1-min annealing process in vacuum, and integrated it into the heterojunction cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) or carbon nanotube (CNT). A thin and dense oxide layer was introduced on the Si surface to provide a high-quality hole transport layer and passivation layer. The layer enhanced the power conversion efficiency from 9.34{\%} to 12.87{\%} (1.38-times enhancement) for the PEDOT:PSS/n-Si cells and from 6.61{\%} to 8.52{\%} (1.29-times enhancement) for the CNT/n-Si cells. The simple passivation is a promising way to enhance the PV performance of the Si cells with various solution-based heterojunctions.",
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AU - Noda, Suguru

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