Fe3Si/GaAs(0 0 1) hybrid structures of high crystal and interfacial perfection are fabricated by molecular beam epitaxy at 200°C. The composition of the films can be tuned over a wide range of Si content. The Fe3Si/GaAs(0 0 1) films are robust against thermal annealing up to 425°C. Room-temperature spin injection is demonstrated from the ferromagnetic metal Fe3Si into the semiconductor GaAs by analyzing the circular polarization of the electroluminescence intensity emitted by an n-i-p light-emitting diode.
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