ZnSe thin films were grown on (100) and (111) oriented Si substrates by molecular beam epitaxy. The single-crystalline ZnSe films were obtained in the substrate temperature range of 300-450°C. The epitaxial layers were evaluated by reflection high-energy electron diffraction, x-ray diffraction, etch pit density, photoluminescence, and Hall effect measurements. Etch pit density was estimated to be 3×105 cm-2. The carrier concentration and electron mobility of the epitaxial ZnSe layers at room temperature are 1.3×1017-2.8×10 17 cm-3 and 170-250 cm2/V s, respectively. These epitaxial films were applied to Au/ZnSe:Mn/Si dc-operated electroluminescent cells. The maximum quantum efficiency of 2.2×10-2 (30.4 V, 6.3×10- 5 A/cm2) was achieved.
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