Epitaxial growth on lattice-mismatched substrate for high-performance lasers

Ryo Nakao, Masakazu Arai, Wataru Kobayashi, Takaaki Kakitsuka, Tsuyoshi Yamamoto, Shinji Matsuo

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Heteroepitaxial, or metamorphic, growth enables us to overcome limitations on the performance of semiconductor devices caused by the lattice-matching restriction. We have demonstrated high-crystalline-quality metamorphic grown InGaAs and GaAs/Ge layers on GaAs and Si substrates, respectively. The InGaAs layer on GaAs allows us to make laser diodes operating at 25 Gbit/s with high characteristic temperature of 187 K at 1.3-μm wavelength. Moreover, III-V compound semiconductors on Si substrate are promising to for large-scale and low-cost fabrication. We have also achieved a high-crystalline-quality GaAs layer on Si substrate by using an MOVPE-grown Ge buffer layer.

本文言語English
ホスト出版物のタイトル2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509019649
DOI
出版ステータスPublished - 2016 8月 1
外部発表はい
イベント2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
継続期間: 2016 6月 262016 6月 30

出版物シリーズ

名前2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
国/地域Japan
CityToyama
Period16/6/2616/6/30

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Epitaxial growth on lattice-mismatched substrate for high-performance lasers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル