Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ¯ 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10 1 ¯ 0) substrates, and r-plane (1 1 ¯ 02). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.

本文言語English
ページ(範囲)4742-4746
ページ数5
ジャーナルJournal of Electronic Materials
45
10
DOI
出版ステータスPublished - 2016 10 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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