Epitaxially grown Cu2Sb-type MnGaGe films with large perpendicular magnetic anisotropy

Mingling Sun*, Takahide Kubota, Keita Ito, Shigeki Takahashi, Yoshiyuki Hirayama, Yoshiaki Sonobe, Koki Takanashi

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A perpendicularly magnetized film is essentially important for spintronics applications, such as spin-transfer-torque type magnetoresistive random access memories, STT-MRAMs, and large perpendicular anisotropy energy, K u, with small saturation magnetization, M s, is required for reducing the critical current for the STT induced magnetization switching phenomenon. In this study, an equiatomic intermetallic compound, MnGaGe, was investigated in epitaxially grown film samples. Perpendicularly magnetized films with an M s value of about 260 emu/cm3 at 300 K were fabricated onto MgO (100) single crystal substrates. The maximum value of K u was 8.1 × 106 erg/cm3 at room temperature. Microstructure analysis using a scanning transmission electron microscope atomically revealed the Cu2Sb type crystal structure in the film sample. First principles calculations were also carried out to discuss the electronic structure. Using the analysis of the projected density of states for 3d-orbitals, the hybridization of the 3d-orbitals was suggested as a possible factor for promoting magnetocrystalline anisotropy. The MnGaGe film with the large K u and relatively small M s would be potentially used for spintronics applications.

本文言語English
論文番号062402
ジャーナルApplied Physics Letters
116
6
DOI
出版ステータスPublished - 2020 2月 10
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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