Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu; K. Wada; J. Müllhäuser; O. Brandt; K. H. Ploog; T. Mizutani; A. Setoguchi; R. Nakai; M. Sugiyama; H. Nakanishi; K. Torii; T. Deguchi; T. Sota; S. Nakamura

doi:10.1063/1.1343504

Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura

先進理工学部

研究成果: Comment/debate › 査読

3 被引用数 (Scopus)

本文言語	English
ページ（範囲）	679
ページ数	1
ジャーナル	Applied Physics Letters
巻	78
号	5
DOI	https://doi.org/10.1063/1.1343504
出版ステータス	Published - 2001 1月 29

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.1343504

他のファイルとリンク

引用スタイル

Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., Setoguchi, A., Nakai, R., Sugiyama, M., Nakanishi, H., Torii, K., Deguchi, T., Sota, T., & Nakamura, S. (2001). Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). Applied Physics Letters, 78(5), 679. https://doi.org/10.1063/1.1343504

Erratum : Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). / Chichibu, S. F.; Wada, K.; Müllhäuser, J.; Brandt, O.; Ploog, K. H.; Mizutani, T.; Setoguchi, A.; Nakai, R.; Sugiyama, M.; Nakanishi, H.; Torii, K.; Deguchi, T.; Sota, T.; Nakamura, S.

In: Applied Physics Letters, Vol. 78, No. 5, 29.01.2001, p. 679.

研究成果: Comment/debate › 査読

Chichibu, SF, Wada, K, Müllhäuser, J, Brandt, O, Ploog, KH, Mizutani, T, Setoguchi, A, Nakai, R, Sugiyama, M, Nakanishi, H, Torii, K, Deguchi, T, Sota, T & Nakamura, S 2001, 'Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))', Applied Physics Letters, vol. 78, no. 5, pp. 679. https://doi.org/10.1063/1.1343504

Chichibu, S. F. ; Wada, K. ; Müllhäuser, J. ; Brandt, O. ; Ploog, K. H. ; Mizutani, T. ; Setoguchi, A. ; Nakai, R. ; Sugiyama, M. ; Nakanishi, H. ; Torii, K. ; Deguchi, T. ; Sota, T. ; Nakamura, S. / Erratum : Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). In: Applied Physics Letters. 2001 ; Vol. 78, No. 5. pp. 679.

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