Erratum: Oxidized Si terminated diamond and its MOSFET operation with SiO2gate insulator (Applied Physics Letters (2020) 116 (212103) DOI: 10.1063/1.5143982)

Wenxi Fei, Te Bi, Masayuki Iwataki, Shoichiro Imanishi, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Comment/debate査読

抄録

This article was originally published on 29May 2020 with an error in the equation on page 4. The equation is correct as it appears below. (Equation Presented) The online version of the article was corrected on 1 June 2020. AIP Publishing apologizes for this error.

本文言語English
論文番号269901
ジャーナルApplied Physics Letters
116
26
DOI
出版ステータスPublished - 2020 6 29

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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