Erratum: Oxidized Si terminated diamond and its MOSFET operation with SiO2gate insulator (Applied Physics Letters (2020) 116 (212103) DOI: 10.1063/1.5143982)

Wenxi Fei, Te Bi, Masayuki Iwataki, Shoichiro Imanishi, Hiroshi Kawarada

研究成果: Comment/debate

抜粋

This article was originally published on 29May 2020 with an error in the equation on page 4. The equation is correct as it appears below. (Equation Presented) The online version of the article was corrected on 1 June 2020. AIP Publishing apologizes for this error.

元の言語English
記事番号269901
ジャーナルApplied Physics Letters
116
発行部数26
DOI
出版物ステータスPublished - 2020 6 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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