Erratum: Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN (Applied Physics Letters (2014) 105 (193509))

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto

研究成果: Comment/debate査読

本文言語English
論文番号049903
ジャーナルApplied Physics Letters
106
4
DOI
出版ステータスPublished - 2015 1 26

ASJC Scopus subject areas

  • 物理学および天文学(その他)

引用スタイル