ESD protection of RF circuits in standard CMOS process

K. Higashi, A. O. Adan, M. Fukumi, N. Tanba, Toshihiko Yoshimasu, M. Hayashi

研究成果: Conference contribution

2 引用 (Scopus)

抄録

The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance CESD depends on the ratio of CESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.

元の言語English
ホスト出版物のタイトルIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
ページ285-288
ページ数4
出版物ステータスPublished - 2002
外部発表Yes
イベント2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA
継続期間: 2002 6 22002 6 4

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Seatle, WA
期間02/6/202/6/4

Fingerprint

Capacitance
Networks (circuits)
Metals
Thyristors
Transistors
Degradation
Oxide semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Media Technology

これを引用

Higashi, K., Adan, A. O., Fukumi, M., Tanba, N., Yoshimasu, T., & Hayashi, M. (2002). ESD protection of RF circuits in standard CMOS process. : IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers (pp. 285-288)

ESD protection of RF circuits in standard CMOS process. / Higashi, K.; Adan, A. O.; Fukumi, M.; Tanba, N.; Yoshimasu, Toshihiko; Hayashi, M.

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. p. 285-288.

研究成果: Conference contribution

Higashi, K, Adan, AO, Fukumi, M, Tanba, N, Yoshimasu, T & Hayashi, M 2002, ESD protection of RF circuits in standard CMOS process. : IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. pp. 285-288, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, 02/6/2.
Higashi K, Adan AO, Fukumi M, Tanba N, Yoshimasu T, Hayashi M. ESD protection of RF circuits in standard CMOS process. : IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. p. 285-288
Higashi, K. ; Adan, A. O. ; Fukumi, M. ; Tanba, N. ; Yoshimasu, Toshihiko ; Hayashi, M. / ESD protection of RF circuits in standard CMOS process. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. pp. 285-288
@inproceedings{0c73375e5ea14f0b94ad7c3a321e451e,
title = "ESD protection of RF circuits in standard CMOS process",
abstract = "The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance CESD depends on the ratio of CESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.",
author = "K. Higashi and Adan, {A. O.} and M. Fukumi and N. Tanba and Toshihiko Yoshimasu and M. Hayashi",
year = "2002",
language = "English",
pages = "285--288",
booktitle = "IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers",

}

TY - GEN

T1 - ESD protection of RF circuits in standard CMOS process

AU - Higashi, K.

AU - Adan, A. O.

AU - Fukumi, M.

AU - Tanba, N.

AU - Yoshimasu, Toshihiko

AU - Hayashi, M.

PY - 2002

Y1 - 2002

N2 - The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance CESD depends on the ratio of CESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.

AB - The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance CESD depends on the ratio of CESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.

UR - http://www.scopus.com/inward/record.url?scp=0036313644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036313644&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036313644

SP - 285

EP - 288

BT - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

ER -