TY - GEN
T1 - Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation
AU - Suzuki, Yuhei
AU - Fujita, Yuma
AU - Fauziah, Khotimatul
AU - Nogita, Takuto
AU - Ikeda, Hiroya
AU - Watanabe, Takanobu
AU - Kamakura, Yoshinari
N1 - Funding Information:
This work was supported by JST-CREST under Grant JPMJCR19Q5.
Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/9/23
Y1 - 2020/9/23
N2 - A phonon transport in Si wire structures were simulated based on a Monte Carlo method to clarify the influence of the wire geometry and the surface roughness on thermal conductivity and the phonon-drag component of Seebeck coefficient. The mean free path (MFP) spectrum was estimated by tracing the simulated phonons. The MFPs of 1 THz phonons which mainly contribute to Seebeck coefficient become shorter with a decrease of the wire width for rough surfaces. This agrees with experimental observation of Seebeck coefficient. The MFPs of 3 THz phonons which mainly contribute to thermal conductivity were influenced even by small-roughness surfaces.
AB - A phonon transport in Si wire structures were simulated based on a Monte Carlo method to clarify the influence of the wire geometry and the surface roughness on thermal conductivity and the phonon-drag component of Seebeck coefficient. The mean free path (MFP) spectrum was estimated by tracing the simulated phonons. The MFPs of 1 THz phonons which mainly contribute to Seebeck coefficient become shorter with a decrease of the wire width for rough surfaces. This agrees with experimental observation of Seebeck coefficient. The MFPs of 3 THz phonons which mainly contribute to thermal conductivity were influenced even by small-roughness surfaces.
KW - Monte Carlo simulation
KW - Phonon
KW - Si
UR - http://www.scopus.com/inward/record.url?scp=85096242247&partnerID=8YFLogxK
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U2 - 10.23919/SISPAD49475.2020.9241616
DO - 10.23919/SISPAD49475.2020.9241616
M3 - Conference contribution
AN - SCOPUS:85096242247
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 15
EP - 18
BT - 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
Y2 - 3 September 2020 through 6 October 2020
ER -